Recently, scientists from Russia, France, Sweden and Greece have worked together to develop an industrial technology to purify graphene. The new method makes graphene more stable and "intact" even when exposed to ozone for 10 minutes. The researchers said the result is an important advance in nanoelectronics technology that will greatly facilitate the development in this area. Graphene is a kind of material that is 1 million times thinner than hair strands and consists of a single layer of carbon atoms arranged in a honeycomb structure. It has superb conductivity, durability and ductility, and can be used to fabricate a wide range of nanoelectronic devices . During production, polymer-coated residues "pollute" the graphene and reduce the mobility of its internal charge carriers. Thermal annealing, plasma degreasing, and chemical solvents can remove polymer residues but at the same time weaken the purity of graphene. Among them, one of the most commonly used purification methods is the use of ozone, although this method is highly reactive, ozone, while destroying the polymer residue, can cause defects in the graphene and cause its performance to be weakened. In view of this, scientists at the Moscow Institute of Engineering Physics (MEPhI) at the Russian National Nuclear Energy Research University have succeeded in obtaining a highly stable graphene using a sublimation of high-temperature silicon carbide (SiC) that has been exposed to ozone for more than 10 minutes Unchanged; ordinary graphene in the same environment in three to four minutes will suffer performance. To further verify the results of the experiment, scientists in Greece, France and Sweden made clear by computer modeling why silicon carbide-graphene remains "intact" under the action of violent oxygen radicals and is more stable: new graphene Unusual stability is obviously related to the lower roughness of epitaxial graphene on the silicon carbide susceptor. Recent discoveries help to better purify graphene, resulting in high quality industrial graphene with stable electrical properties.